IRF830PBF Power MOSFET

The IRF830 is a silicon N-channel Enhanced MOSFET designed with advanced technology to reduce conduction loss, enhance switching performance, and boost avalanche energy. This MOSFET is well-suited for Switched Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.

Key Characteristics:

• VDS: 550V, ID: 4A, RDS(ON). Typ: 2.2 Ω
• Fast Switching, Low Crss
• 100% Avalanche Tested
• Improved dv/dt Capability

Applications:

• Ideal for high frequency switching mode power supply applications
• Active Power Factor Correction

Absolute Ratings:

• Drain-to-Source Voltage (VDSS): 550V
• Continuous Drain Current (ID): 4A
• Pulsed Drain Current (IDM): 16A
• Gate-to-Source Voltage (VGS): ±30V
• Single Pulse Avalanche Energy (EAS): 10mJ
• Power Dissipation (PD): 33W (TO-220)
• Operating Temperature Range: -55 to 150°C

Extra resources:

Datasheet: IRF830 Power MOSFET Datasheet