IRF530 Power MOSFET
The IRF530 MOSFET utilizes advanced trench technology, ensuring outstanding RDS(ON) and low gate charge. Its versatile design makes it suitable for a wide range of applications, including power switching, hard-switched, high-frequency circuits, and uninterruptible power supply systems.
Key Characteristics:
- VDS = 100V, ID = 15A
- RDS(ON) < 90mΩ @ VGS=10V
- RDS(ON) < 115mΩ @ VGS=4.5V
- High-density cell design for lower Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for efficient heat dissipation
- 100% UIS TESTED!
- 100% DVDS TESTED!
Absolute Maximum Ratings:
- Drain-Source Voltage (VDS): 100V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 15A
- Pulsed Drain Current (IDM): 40A
- Maximum Power Dissipation (Tc=25℃): 31W
- Single Pulse Avalanche Energy (EAS): 21mJ
- Operating Junction and Storage Temperature Range: -55 To 175℃
- Thermal Resistance, Junction-to-Case (RθJC): 4.8 ℃/W
Datasheet
For the full technical specifications please refer to the datasheet: IRF530 MOSFET Datasheet