IRF540N MOSFET
Unleash efficiency with the IRF540N MOSFET, employing advanced trench technology for superior RDS(ON) and low gate charge. Perfect for power switching, hard-switched, and high-frequency circuits, as well as uninterruptible power supplies.
Key Features:
- VDS = 100V, ID = 35A, RDS(ON) < 30mΩ @ VGS=10V
- High-density cell design for lower Rdson
- Fully characterized avalanche voltage and current
- Good stability with high EAS
- TO-220 package for excellent heat dissipation
- 100% UIS TESTED, 100% DVDS TESTED
Applications:
- Ideal for power switching applications
- Perfect for hard-switched and high-frequency circuits
- Reliable in uninterruptible power supplies
Maximum Ratings:
- Drain-Source Voltage (VDS): 100V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 35A
- Maximum Power Dissipation: 70W
- Operating Temperature Range: -55 to 175°C
Electrical Characteristics:
- Breakdown Voltage (BVDSS): 100V
- Zero Gate Voltage Drain Current (IDSS): Up to 1μA
- Gate Threshold Voltage (VGS(th)): 1.2 - 3V
- On-State Resistance (RDS(ON)): 25 - 30mΩ @ VGS=10V, ID=12A
Datasheet
The datasheet for the IRF540N MOSFET can be found here: IRF540N Datasheet