Power Mosfet IRFZ44 49A 55V
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels of approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
|Maximum Continuous Drain Current||49 A|
|Maximum Drain Source Voltage||55 V|
|Mounting Type||Through Hole|
|Maximum Drain Source Resistance||17.5 mΩ|
|Maximum Gate Threshold Voltage||4V|
|Minimum Gate Threshold Voltage||2V|
|Maximum Power Dissipation||94 W|
|Maximum Gate Source Voltage||-20 V, +20 V|
|Number of Elements per Chip||1|
|Typical Gate Charge @ Vgs||63 nC @ 10 V|
|Maximum Operating Temperature||+175 °C|
|Minimum Operating Temperature||-55 °C|