IRF540N MOSFET

SKU: EC-208

Price:
Sale priceR 7.25

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In stock (30 units), ready to be shipped

IRF540N MOSFET

Unleash efficiency with the IRF540N MOSFET, employing advanced trench technology for superior RDS(ON) and low gate charge. Perfect for power switching, hard-switched, and high-frequency circuits, as well as uninterruptible power supplies.

Key Features:

  • VDS = 100V, ID = 35A, RDS(ON) < 30mΩ @ VGS=10V
  • High-density cell design for lower Rdson
  • Fully characterized avalanche voltage and current
  • Good stability with high EAS
  • TO-220 package for excellent heat dissipation
  • 100% UIS TESTED, 100% DVDS TESTED

Applications:

  • Ideal for power switching applications
  • Perfect for hard-switched and high-frequency circuits
  • Reliable in uninterruptible power supplies

Maximum Ratings:

  • Drain-Source Voltage (VDS): 100V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 35A
  • Maximum Power Dissipation: 70W
  • Operating Temperature Range: -55 to 175°C

Electrical Characteristics:

  • Breakdown Voltage (BVDSS): 100V
  • Zero Gate Voltage Drain Current (IDSS): Up to 1μA
  • Gate Threshold Voltage (VGS(th)): 1.2 - 3V
  • On-State Resistance (RDS(ON)): 25 - 30mΩ @ VGS=10V, ID=12A

Datasheet

The datasheet for the IRF540N MOSFET can be found here: IRF540N Datasheet

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